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High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs

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5 Author(s)
Deguchi, T. ; Technol. Dev. Headquarters, New Japan Radio Co., Ltd., Fujimino, Japan ; Kikuchi, T. ; Arai, M. ; Yamasaki, K.
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An excellent on/off current ratio of 1010 and a nearly ideal subthreshold slope of 65 mV/dec was confirmed in a p-InGaN/AlGaN/GaN high-electron-mobility transistor. Favorable I-V characteristics were achieved with the p-InGaN cap layer under the gate electrode. A dry etching technique with a low-damage p-InGaN cap layer resulted in a significantly low leakage current of 10-11 A/mm.

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Electron Device Letters, IEEE  (Volume:33 ,  Issue: 9 )