By Topic

An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
9 Author(s)
Wang, Jiaxing ; Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China ; Wang, Lai ; Wang, Lei ; Hao, Zhibiao
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4736591 

A carrier rate model taking carrier delocalization into account is presented to analyze current dependent internal quantum efficiency of InGaN based light-emitting diodes (LEDs). By fitting normalized experimental internal quantum efficiency-current curves, both injection efficiency and radiative recombination efficiency depending on current can be obtained. Based on the fitting results from two LED samples with and without the InGaN interlayer beneath the active regions of 5 InGaN quantum wells (QWs), carrier delocalization and carrier leakage are believed to lead to the efficiency droop effect under considerable and even larger injection, respectively. By investigating two LED samples with 8 and 10 QWs, it is found that the 8-QWs LED has the highest radiative recombination efficiency over 80% and the 10-QWs one has the highest injection efficiency over 50% under 120 A/cm2. This means that increasing QW number is an effective method to suppress droop effect.

Published in:

Journal of Applied Physics  (Volume:112 ,  Issue: 2 )