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Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

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8 Author(s)
Afroz Faria, Faiza ; Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA ; Guo, Jia ; Zhao, Pei ; Guowang Li
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Ti/Al/Ni/Au ohmic contacts were formed on heavily doped n+ metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (RC) and sheet resistance (Rsh) as a function of corresponding GaN free carrier concentration (n) were measured. Very low RC values (<0.09 Ω mm) were obtained, with a minimum RC of 0.035 Ω mm on a sample with a room temperature carrier concentration of ∼5 × 1019 cm-3. Based on the systematic study, the role of RC and Rsh is discussed in the context of regrown n+ GaN ohmic contacts for GaN based high electron mobility transistors.

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Applied Physics Letters  (Volume:101 ,  Issue: 3 )