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Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode

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4 Author(s)
Kumar, Ashutosh ; Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India ; Asokan, K. ; Kumar, V. ; Singh, R.

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1/f noise measurements were performed on Ni/n-GaN Schottky barrier diode under forward bias over a wide temperature range from 80 to 300 K. The noise spectra exhibited frequency dependence proportional to 1/f′ with γ varying between 0.8 and 1.1 down to 1 Hz. The spectral power density of current fluctuations, SI, was found to decrease with increase in temperature. Current-voltage (I-V) characteristics of the diodes have been measured, and metal-semiconductor interface was found to be spatially inhomogeneous in the temperature range 80–300 K. The decrease in 1/f noise with increase in temperature is explained within the framework of spatial inhomogeneities model.

Published in:

Journal of Applied Physics  (Volume:112 ,  Issue: 2 )