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Browse Journals & Magazines > Applied Physics Letters ...> Volume:101 Issue:3 Help

Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films

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8 Author(s)
Zhan, Peng ; State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People’s Republic of China ; Wang, Weipeng ; Xie, Zheng ; Li, Zhengcao
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Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as ∼0.55 μB/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from ∼0.44 emu/g (on quartz) to ∼1.18 emu/g (on silicon) after annealing at 600 °C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism.

Published in:
Applied Physics Letters  (Volume:101 ,  Issue: 3 )

Date of Publication: Jul 2012

Page(s):
031913 - 031913-4
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.4737881
Product Type:
Journals & Magazines
Date of Current Version :
23 July 2012
Issue Date :
Jul 2012

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