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Complementary metal–oxide–semiconductor compatible high efficiency subwavelength grating couplers for silicon integrated photonics

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6 Author(s)
Xiaochuan Xu ; Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, USA ; Subbaraman, H. ; Covey, J. ; Kwong, David
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4737412 

We demonstrate a through-etched grating coupler based on subwavelength nanostructure. The grating consists of arrays of 80 nm × 343 nm rectangular air holes, which can be patterned in a single lithography/etch. A peak coupling efficiency of 59% at 1551.6 nm and a 3 dB bandwidth of 60 nm are achieved utilizing the silicon-on-insulator platform with a 1 μm thick buried-oxide layer for transverse electric mode. The performance is comparable to gratings requiring much more complicated fabrication processes.

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Applied Physics Letters  (Volume:101 ,  Issue: 3 )