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Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

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8 Author(s)
Kim, Byung-Jae ; Department of Chemical and Biological Engineering, Korea University, Seoul 136-713, Korea ; Lee, Chongmin ; Mastro, M.A. ; Hite, J.K.
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We report that the oxidation of graphene-based highly transparent conductive layers to AlGaN/GaN/AlGaN ultra-violet (UV) light-emitting diodes (LEDs) was suppressed by the use of SiNX passivation layers. Although graphene is considered to be an ideal candidate as the transparent conductive layer to UV-LEDs, oxidation of these layers at high operating temperatures has been an issue. The oxidation is initiated at the un-saturated carbon atoms at the edges of the graphene and reduces the UV light intensity and degrades the current-voltage (I-V) characteristics. The oxidation also can occur at defects, including vacancies. However, GaN-based UV-LEDs deposited with SiNX by plasma-enhanced chemical vapor deposition showed minimal degradation of light output intensity and I-V characteristics because the graphene-based UV transparent conductive layers were shielded from the oxygen molecules. This is a simple and effective approach for maintaining the advantages of graphene conducting layers as electrodes on UV-LEDs.

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Applied Physics Letters  (Volume:101 ,  Issue: 3 )