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A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications

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6 Author(s)
Zhichao Tan ; Electron. Instrum. Lab., Delft Univ. of Technol., Delft, Netherlands ; Youngcheol Chae ; Daamen, R. ; Humbert, A.
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A CMOS fully-integrated humidity sensor for a RFID sensor platform has been realized in 0.16μm CMOS technology. It consists of a top-metal finger capacitor, covered by a humidity-sensitive polyimide layer, and an energy-efficient inverter-based capacitance-to-digital converter (CDC). Measurements show that the CDC performs a 12.5-bit conversion in 0.8ms while consuming only 8.6μA from a 1.2V supply. Together with the co-integrated humidity sensor, this translates into a resolution of 0.05% RH in the range of 30% RH to 90% RH, at an energy consumption of only 8.3nJ per measurement.

Published in:

VLSI Circuits (VLSIC), 2012 Symposium on

Date of Conference:

13-15 June 2012

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