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Oxygen-induced high-k degradation in TiN/HfSiO gate stacks

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7 Author(s)
Hosoi, T. ; Grad. Sch. of Eng., Osaka Univ., Suita, Japan ; Odake, Y. ; Chikaraishi, K. ; Arimura, H.
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We have investigated the diffusion kinetics of Hf in TiN/HfSiO gate stacks. The Hf upward diffusion is found to be independent of interfacial SiO2 growth, but depends on the amount of oxygen in the gate stacks. It is also revealed that Hf diffusion into TiN electrode occurs at above 650°C and leads to high-k degradation.

Published in:

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Date of Conference:

10-11 June 2012