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Rectifying characteristics and implementation of n-Si/HfO2 based devices for 1D1R-based cross-bar memory array

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10 Author(s)
Zhang, F.F. ; Inst. of Microelectron., Peking Univ., Beijing, China ; Huang, P. ; Chen, B. ; Yu, D.
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Excellent rectifying characteristics are demonstrated in the fab-friendly n-Si/HfO2/Ni/TiN devices with rectification ratio of >;107 and the driving current of 1mA as a 1D-like selector. The rectified unipolar switching behaviors are demonstrated in the 1D1R cell structured with a diode-like device of n-Si/HfO2/Ni/TiN (1D) and a unipolar RRAM of n+-Si/HfOx/Ni/TiN (1R). Based on the measured I-V characteristics, these excellent selection behavior can be implemented in the cross-bar memory array of >;64K bits RRAM with large read margin.

Published in:

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Date of Conference:

10-11 June 2012

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