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Magnetic tunnel junction for magnetoresistive random access memory and beyond

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1 Author(s)
Ohno, H. ; Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan

I have reviewed current status of MTJ and how it can be used in memories and logic circuits, referring to some of our recent implementations. The ultimate scalability of MTJ technology will be determined by both materials involved and processing technology. It is difficult to foresee how far in dimension one can go at this point. But we should be able to learn from the materials science for hard disk media that can realize high Δ at dimensions less than 10nm and is continuing to develop a patterned one.

Published in:

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Date of Conference:

10-11 June 2012