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High performance Ω-gate Ge FinFET featuring low temperature Si2H6 passivation and implantless Schottky-barrier NiGe metallic Source/Drain

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12 Author(s)
Liu, Bin ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore ; Xiao Gong ; Genquan Han ; Lim, P.S.Y.
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We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si2H6 passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400 °C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a record high on-state current ION of ~494 μA/μm at VGS - VTH = -1 V and VDS = -1 V. A high ION/IOFF ratio of more than 3×104 and a high peak saturation transconductance GMSatMax of ~540 μS/μm were achieved.

Published in:

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Date of Conference:

10-11 June 2012