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Comparative study of tri-gate- and double-gate-type poly-Si fin-channel split-gate flash memories

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12 Author(s)
Liu, Y.X. ; Tsukuba Central 2, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan ; Kamei, T. ; Matsukawa, T. ; Endo, K.
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The tri-gate (TG)- and double-gate (DG)-type poly-Si fin-channel split-gate flash memories with a thin n+-poly-Si floating-gate (FG) have successfully been fabricated, and their electrical characteristics including the variations of threshold voltage (Vt) and S-slope have been comparatively investigated. It was experimentally found that better short-channel effect (SCE) immunity, smaller Vt variations, and a higher program speed are obtained in the TG-type flash memories than in the DG-type memories. Moreover, it was also confirmed that over-erase is effectively suppressed by split-gate structure.

Published in:

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Date of Conference:

10-11 June 2012