Cart (Loading....) | Create Account
Close category search window

Antimonide NMOSFET with source side injection velocity of 2.7×107 cm/s for low power high performance logic applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Ali, A. ; Pennsylvania State Univ., University Park, PA, USA ; Madan, H. ; Barth, M.J. ; Hollander, M.J.
more authors

Antimonide (Sb) quantum well (QW) MOSFETs are demonstrated with integrated high-κ dielectric (1nmAl2O3-10nm HfO2). The long channel Sb NMOS exhibits effective electron mobility of 6,000 cm2/Vs at high field (2 × 1012 /cm2 of charge density (Ns)), which is the highest reported value for any III-V MOSFET. The short channel Sb NMOSFET (LG = 150nm) exhibits a cut-off frequency (fT) of 120GHz, fT - LG product of 18GHz.μm and source side injection velocity (veff) of 2.7×107 cm/s, at drain bias (VDS) of 0.75V and gate overdrive of 0.6V. The measured fT and fT × LG are 2 x higher, and veff is 4× higher than Si NMOS (1.0-1.2V VDD) at similar LG, and are the highest for any III-V MOSFET.

Published in:

VLSI Technology (VLSIT), 2012 Symposium on

Date of Conference:

12-14 June 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.