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Antimonide (Sb) quantum well (QW) MOSFETs are demonstrated with integrated high-κ dielectric (1nmAl2O3-10nm HfO2). The long channel Sb NMOS exhibits effective electron mobility of 6,000 cm2/Vs at high field (2 × 1012 /cm2 of charge density (Ns)), which is the highest reported value for any III-V MOSFET. The short channel Sb NMOSFET (LG = 150nm) exhibits a cut-off frequency (fT) of 120GHz, fT - LG product of 18GHz.μm and source side injection velocity (veff) of 2.7×107 cm/s, at drain bias (VDS) of 0.75V and gate overdrive of 0.6V. The measured fT and fT × LG are 2 x higher, and veff is 4× higher than Si NMOS (1.0-1.2V VDD) at similar LG, and are the highest for any III-V MOSFET.