85nm-wide 1.5mA/µm-ION IFQW SiGe-pFET: Raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study

Beside the V
_TH
-tunability, a raised SiGe S/D module offers higher L
_G
-scalability than an embedded SiGe S/D in SiGe-IFQW pFETs. In-depth transport study of record performing 1.5mA/μm-I
_ON
strained-SiGe IFQW pFETs reveals that mobility improvement is still the key performance booster whereas L
_G
-scaling has limited impact.