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85nm-wide 1.5mA/µm-ION IFQW SiGe-pFET: Raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study

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10 Author(s)
J. Mitard ; Imec, Kapeldreef 75, B-3001 Leuven, Belgium ; L. Witters ; G. Eneman ; G. Hellings
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Beside the VTH-tunability, a raised SiGe S/D module offers higher LG-scalability than an embedded SiGe S/D in SiGe-IFQW pFETs. In-depth transport study of record performing 1.5mA/μm-ION strained-SiGe IFQW pFETs reveals that mobility improvement is still the key performance booster whereas LG-scaling has limited impact.

Published in:

VLSI Technology (VLSIT), 2012 Symposium on

Date of Conference:

12-14 June 2012