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Browse Conference Publications > VLSI Technology (VLSIT), 2012 ... Help

85nm-wide 1.5mA/µm-ION IFQW SiGe-pFET: Raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study

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10 Author(s)
Mitard, J. ; Imec, Leuven, Belgium ; Witters, L. ; Eneman, G. ; Hellings, G.
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Beside the VTH-tunability, a raised SiGe S/D module offers higher LG-scalability than an embedded SiGe S/D in SiGe-IFQW pFETs. In-depth transport study of record performing 1.5mA/μm-ION strained-SiGe IFQW pFETs reveals that mobility improvement is still the key performance booster whereas LG-scaling has limited impact.

Published in:
VLSI Technology (VLSIT), 2012 Symposium on

Date of Conference: 12-14 June 2012

Page(s):
163 - 164
ISSN :
0743-1562
E-ISBN :
978-1-4673-0845-8
Print ISBN:
978-1-4673-0846-5
INSPEC Accession Number:
12879798
Conference Location :
Honolulu, HI
Digital Object Identifier :
10.1109/VLSIT.2012.6242512
Product Type:
Conference Publications

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