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Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS

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36 Author(s)
A. Khakifirooz ; IBM Research, Albany, NY 12203, USA ; K. Cheng ; T. Nagumo ; N. Loubet
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High-performance strain-engineered ETSOI devices are reported. Three methods to boost the performance, namely contact strain, strained SOI (SSDOI) for NFET, and SiGe-on-insulator (SGOI) for PFET are examined. Significant performance boost is demonstrated with competitive drive currents of 1.65mA/μm and 1.25mA/μm, and Ieff of 0.95mA/μm and 0.70mA/μm at Ioff =100nA/μm and VDD of 1V, for NFET and PFET, respectively.

Published in:

VLSI Technology (VLSIT), 2012 Symposium on

Date of Conference:

12-14 June 2012