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A novel cross point one-resistor (0T1R) conductive bridge random access memory (CBRAM) with ultra low set/reset operation current

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7 Author(s)
F. M. Lee ; Macronix Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Rd. Hsinchu Science Park, Hsinchu, Taiwan, ROC ; Y. Y. Lin ; M. H. Lee ; W. C. Chien
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Using the dual Vth characteristics of a multi-layer SiO2/SiO2/Cu-GST conducting bridge (CB) structure we can construct a one-resistor cell without an access device (0T1R). Like 1T Flash memory the Vth is used to store the logic state thus leaving all devices always at high resistance state and a separate isolation device is not needed. The Vth of the cell is determined by the presence of CB in the SiO2 layer only. The CB in the SiO2 is present only temporarily during reading, and is spontaneously dissolved afterward. This spontaneous rupture of the filament in the SiO2 layer greatly reduces the switching current as well as reducing the read disturb. The mechanism for the spontaneous rupture phenomenon is investigated.

Published in:

VLSI Technology (VLSIT), 2012 Symposium on

Date of Conference:

12-14 June 2012