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Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays

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14 Author(s)
Wootae Lee ; Dept. of Mat. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea ; Jubong Park ; Jungho Shin ; Jiyong Woo
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We demonstrate a varistor-type bidirectional switch (VBS) with excellent selection property for future 3D bipolar resistive memory array. A highly non-linear VBS showed superior performances including high current density (>;3×107A/cm2) and high selectivity (~104). The non-linear I-V characteristics can be explained by varistor-type multi-layer tunnel barriers, which were formed by Ta incorporation into thin TiO2. Furthermore, the 1S1R device showed excellent suppression of leakage current (>;104 reduction) at 1/2VREAD, which is promising for ultra-high density resistive memory applications.

Published in:

VLSI Technology (VLSIT), 2012 Symposium on

Date of Conference:

12-14 June 2012

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