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Dramatic improvement of high-k gate dielectric reliability by using mono-layer graphene gate electrode

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4 Author(s)
Jong Kyung Park ; Dept. of Electr. Eng., KAIST, Daejeon, South Korea ; Seung Min Song ; Hun Mun, Jeong ; Jin Cho, Byung

We demonstrate for the first time that the high-k gate dielectric reliability is dramatically improved by replacing metal gate electrode with graphene gate electrode. The atomic-scale thickness and flexible nature of graphene completely eliminate mechanical stress in the high-k gate dielectric, resulting in significant reduction of trap generation in the high-k film. Almost all the electrical properties related to reliability of MOSFET such as the PBTI, TDDB, leakage current, etc are significantly improved. Data retention and program/erase properties of charge trap Flash memory are also greatly improved.

Published in:

VLSI Technology (VLSIT), 2012 Symposium on

Date of Conference:

12-14 June 2012