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High-Responsivity Modulation-Doped AlGaAs/InGaAs Thermopiles for Uncooled IR-FPA Utilizing Integrated HEMT–MEMS Technology

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7 Author(s)
Abe, M. ; 3D Bio Co., Ltd., Hadano, Japan ; Abe, Y. ; Kogushi, N. ; Kian Siong Ang
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Novel thermopiles based on modulation-doped AlGaAs/InGaAs heterostructures are proposed and developed for the first time for uncooled IR focal plane array (FPA) image sensor application. The high responsivity R with the high-speed response time τare designed to be 4900 V/W with 110 μs. Based on integrated high-electron-mobility-transistor-microelectromechanical-system technology, the 32 × 32 matrix FPAs are fabricated to demonstrate its enhanced performance by blackbody measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled IR FPA applications.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 9 )

Date of Publication:

Sept. 2012

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