The impact of narrow width effects on high frequency performance and noise in 35nm multi-finger n-MOSFETs

The impact of narrow width effects on high frequency performance parameters like f
_T
, f
_MAX
, and RF noise in 35nm multi-finger n-MOSFETs is investigated in this paper. Multi-OD devices with extremely narrow width and fixed finger number (N
_F
) reveal higher R
_g
and C
_gg
, which lead to the penalty in f
_T
, f
_MAX
, and NF
_min
. On the other hand, narrow-OD MOSFET with larger N
_F
can yield lower R
_g
and higher f
_MAX
. However, these narrow-OD devices even with lower R
_g
suffer lower f
_T
and higher NF
_min
. The mechanisms responsible for narrow width effects on f
_T
, f
_MAX
, and noise parameters will be addressed to provide an important guideline of MOSFET layout for RF circuits design using nanoscale CMOS technology.