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The impact of narrow width effects on high frequency performance and noise in 35nm multi-finger n-MOSFETs

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3 Author(s)
Kuo-Liang Yeh ; Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chih-Shiang Chang ; Jyh-Chyurn Guo

The impact of narrow width effects on high frequency performance parameters like fT, fMAX, and RF noise in 35nm multi-finger n-MOSFETs is investigated in this paper. Multi-OD devices with extremely narrow width and fixed finger number (NF) reveal higher Rg and Cgg, which lead to the penalty in fT, fMAX, and NFmin. On the other hand, narrow-OD MOSFET with larger NF can yield lower Rg and higher fMAX. However, these narrow-OD devices even with lower Rg suffer lower fT and higher NFmin. The mechanisms responsible for narrow width effects on fT, fMAX, and noise parameters will be addressed to provide an important guideline of MOSFET layout for RF circuits design using nanoscale CMOS technology.

Published in:

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Date of Conference:

17-19 June 2012