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A highly integrated dual-band SiGe power amplifier that enables 256 QAM 802.11ac WLAN radio front-end designs

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6 Author(s)
Huang, C.-W.P. ; Skyworks Solutions, Inc., Andover, MA, USA ; Antognetti, P. ; Lui Lam ; Quaglietta, T.
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A highly integrated SiGe BiCMOS PA is presented that enables the emerging high throughput 802.11ac WLAN applications. The PA has two stages for the g-band and three stages for the a-band PA, and integrates matching circuitry, out of band rejection filters, power detectors, and bias controls in a 1.5 ×1.6 mm chip. The g-band PA achieves 28 dB gain with 2% EVM at 18 dBm and 3% at 19.5 dBm output power. The a-band PA achieves 32 dB gain with 2% EVM at 18 dBm and 3% EVM at 19 dBm output power. The design is verified meeting not only the regulatory out-of-band emission requirements but also the linearity requirement of the emerging 256 QAM 802.11ac standard.

Published in:

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Date of Conference:

17-19 June 2012