Cart (Loading....) | Create Account
Close category search window
 

A wideband gain-boosting 8mW LNA with 23dB gain and 4dB NF in 65nm CMOS process for 60 GHz applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

A three stage single-ended LNA using transformer (TF) matching and gain-boosting by capacitive feedback for wideband operation in the 57-66GHz band is presented. The LNA, fabricated in a 65nm standard CMOS process, achieves a 23dB-gain 4dB NF at 6mA and 1.25V supply, with 2dBm Psat and 0.05mm2 in size, demonstrating best reported noise figure, gain, power consumption and chip area compared to published 60 GHz LNAs. Different neutralization topologies were analyzed and compared based on analytical TF models that were created. Optimal gain-boosting is achieved by capacitive feedback after a 180-deg TF together with special decoupling capacitors of MOM and MOS stacked types.

Published in:

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Date of Conference:

17-19 June 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.