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A 60GHz Class-E tuned power amplifier with PAE >25% in 32nm SOI CMOS

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2 Author(s)
Ogunnika, O.T. ; T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA ; Valdes-Garcia, Alberto

A Class-E tuned CMOS power amplifier (PA) operating in the 60 GHz band is presented. Design, layout, and parasitic modeling considerations to attain high-efficiency millimeter-wave PA operation are discussed. Both single-ended and differential versions of the single-stage PA are implemented in a 32nm SOI CMOS process. Peak power added efficiency of 27% (30%), power gain of 8.8dB (10dB), and saturated output power >;9dBm (12.5dBm) are measured at 60GHz from the single-ended (differential) PA with 0.9V supply.

Published in:

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Date of Conference:

17-19 June 2012