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A 30GHz 2dB NF low noise amplifier for Ka-band applications

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3 Author(s)
Qian Ma ; Mixed-Signal Microelectronics Group, Eindhoven University of Technology, the Netherlands ; D. Leenaerts ; R. Mahmoudi

A 30GHz Ka-band low noise amplifier (LNA) has been realized in a 0.25μm SiGe:C BiCMOS technology. A noise figure (NF) of 1.8-2.2 dB has been measured at 26-32 GHz. The achieved 3dB-power bandwidth is larger than 7GHz, with a peak gain of 12.4dB at 29.2GHz. The input 1 dB compression point (ICP1dB) is -11dBm and input IP3 is -1.3dBm at 30GHz for a total power consumption of 98mW. The chip area including bond pads is 1mm×0.7mm.

Published in:

2012 IEEE Radio Frequency Integrated Circuits Symposium
IEEE RFIC Virtual Journal
IEEE RFID Virtual Journal

Date of Conference:

17-19 June 2012