Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4737169
Carbon nanotube field effect transistors (CNT-FETs) with graphitic carbon (G-C) contacts were fabricated and the electrical properties of the G-C contacts were studied. The CNT-FETs showed p-type conduction in air. However, the conduction type has changed to ambipolar in vacuum after annealing at 200 °C. This suggests that the p-type conduction in air is attributed to the adsorbed oxygen. The barrier heights at the G-C/CNT contacts in vacuum were ∼400 meV for electrons and ∼310 meV for holes. These values suggest that the Fermi level of G-C contacts is located at slightly below the midgap of the CNTs in vacuum.
Published in:
Applied Physics Letters
(Volume:101
,
Issue:
3
)
Date of Publication: Jul 2012
- Page(s):
- 033101 - 033101-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.4737169
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 19 July 2012
- Issue Date :
- Jul 2012
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
