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Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method

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8 Author(s)
Abe, S. ; Dept. of Adv. Energy Eng. Sci., Kyushu Univ., Kasuga, Japan ; Watanabe, Y. ; Shibano, N. ; Sano, N.
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We have analyzed terrestrial neutron-induced soft errors in MOSFETs from a 65 nm to a 25 nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS code system. The resulting scaling trend of SERs per bit is still decreasing similar to other predictions. From this analysis, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that terrestrial neutrons with energies up to several hundreds of MeV have a significant contribution to soft errors regardless of design rule and critical charge.

Published in:

Reliability Physics Symposium (IRPS), 2012 IEEE International

Date of Conference:

15-19 April 2012