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Reliability characterization of 32nm high-k metal gate SOI technology with embedded DRAM

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13 Author(s)
Mittl, S. ; IBM Microelectron., Essex Junction, VT, USA ; Swift, A. ; Wu, E. ; Ioannou, D.
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The reliability characterization of a high performance 32nm SOI CMOS technology featuring gate first High-K Metal Gate and embedded High-K Metal Fill DRAM is presented. This technology features high performance 0.9V thin dielectric devices and 1.5V thick dielectric I/O devices. Included are results of Hot Carrier, Bias Temperature, Planar and Trench Node TDDB, Gate to Contact, silicon eFUSE, SER, SRAM and Logic circuit reliability evaluations.

Published in:

Reliability Physics Symposium (IRPS), 2012 IEEE International

Date of Conference:

15-19 April 2012

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