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Reduction of Charge Trapping in \hbox {HfO}_{2} Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers

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11 Author(s)
Jung, H.-S. ; WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Korea ; Yu, I.-H. ; Kim, H.K. ; Lee, S.Y.
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The dielectric performance and charge trapping properties of $ hbox{HfO}_{2}$ on a Ge substrate with various passivating interfacial layers (PILs), such as $hbox{SiO}_{x}hbox{N}_{y}$, $hbox{AlO}_{x}hbox{N}_{y}$, $hbox{HfO}_{x}hbox{N}_{y}$ , and $hbox{LaO}_{x}hbox{N}_{y}$, are investigated. The large capacitance–voltage ($C$$V$) hysteresis of $ hbox{HfO}_{2}$ on a Ge substrate ($sim$1500 mV) was not improved by inserting either $hbox{HfO}_{x}hbox{N}_{y}$ or $hbox{LaO}_{x}hbox{N}_{y}$ PIL between the $hbox{HfO}_{2}$ and Ge substrates, while both $hbox{SiO}_{x}hbox{N}_{y}$ and $hbox{AlO}_{x}hbox{N}_{y}$ PILs induced a noticeable reduction of $C$$V$ hysteresis. As the PILs' thicknesses increased, the $C$$V$ hysteresis of $ hbox{HfO}_{2}$ with $hbox{SiO}_{x}hbox{N}_{y}$ PIL decreased to almost zero, while that of $hbox{HfO}_{2}$ with $hbox{AlO}_{x}hbox{N}_{y}$ PIL decreased but was saturated at approximately 400 mV. Furthermore, the charge trapping property of $ hbox{HfO}_{2}$ with $hbox{SiO}_{x}hbox{N}_{y}$ PIL on a Ge substrate is comparable to that of $hbox{HfO}_{2}$ grown on a Si substrate. Negligible $C$$V$ hysteresis and negligible charge trapping of $hbox{HfO}_{2}$ with $ hbox{SiO}_{x}hbox{N}_{y}$ PIL were understood from the fact that $hbox{SiO}_{x}hbox{N}_{y}$ is more resistant to react with a Ge substrate and defective Ge suboxides are efficiently suppressed during the formation of $hbox{SiO}_{x} hbox{N}_{y}$ PIL and $hbox{HfO}_{2}$ layers.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 9 )