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Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links

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2 Author(s)
Sedighi, B. ; National ICT Australia (NICTA), The University of Melbourne, Melbourne , Australia ; Christoph Scheytt, J.

We propose a new circuit for the realization of transimpedance amplifiers (TIAs), targeted at reducing the input-referred noise of the TIA or alternatively increasing the bandwidth, without increasing the power dissipation. An intensive theoretical analysis of the method is given. A prototype chip is fabricated in 0.25- $muhbox{m}$ SiGe BiCMOS technology. The TIA has a gain of 71 $hbox{dB}Omega$, a bandwidth of 20.5 GHz, and an average input-referred current noise density of 18 $hbox{pA}/surd hbox{Hz}$ . The circuit operates from a 2.5-V supply, and power dissipation is 57 mW.

Published in:

Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:59 ,  Issue: 8 )

Date of Publication:

Aug. 2012

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