By Topic

Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Behnam Sedighi ; National ICT Australia (NICTA), The University of Melbourne, Melbourne , Australia ; J. Christoph Scheytt

We propose a new circuit for the realization of transimpedance amplifiers (TIAs), targeted at reducing the input-referred noise of the TIA or alternatively increasing the bandwidth, without increasing the power dissipation. An intensive theoretical analysis of the method is given. A prototype chip is fabricated in 0.25- \mu\hbox {m} SiGe BiCMOS technology. The TIA has a gain of 71 \hbox {dB}\Omega , a bandwidth of 20.5 GHz, and an average input-referred current noise density of 18 \hbox {pA}/\surd \hbox {Hz} . The circuit operates from a 2.5-V supply, and power dissipation is 57 mW.

Published in:

IEEE Transactions on Circuits and Systems II: Express Briefs  (Volume:59 ,  Issue: 8 )