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Thickness dependence oscillations of transport properties in thin films of a topological insulator Bi91Sb9

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5 Author(s)
Rogacheva, E.I. ; National Technical University “Kharkov Polytechnic Institute,” 21 Frunze Street, Kharkov 61002, Ukraine ; Orlova, D.S. ; Nashchekina, O.N. ; Dresselhaus, M.S.
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The dependences of the electrical conductivity, Hall coefficient, magnetoresistance, and Seebeck coefficient on the thickness d (d = 15–400 nm) of the topological insulator Bi91Sb9 thin films grown on mica substrates were obtained at room temperature. In addition to the oscillations with a period Δd = (105 ± 5) nm in the thickness range d = 100–400 nm which are attributed to the quantization of the semiconductor electron energy spectrum, oscillations with a period Δd = (8 ± 2) nm in the range d = 15–60 nm were also revealed. It is suggested that the existence of the high-frequency oscillations in the thin films may be connected with the quantization of the metallic surface states energy spectrum.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 2 )