An AlGaN/GaN HEMT-based monolithic integrated X-band low noise amplifier

Noise performance of AlGaN/GaN HEMT has received more and more worldwide attention in recent years. In this paper, a MMIC process in AlGaN/GaN technology has been developed. A LNA design is based on a AlGaN/GaN HEMT noise model and a complete model library of passive elements under the optimum bias for LNA design. The paper describes modeling, bias dependence of small-signal and noise parameters, circuit design of the LNA using noise model without transistor noise measurement, and demonstrates a NF of 2 dB at 8GHz.