By Topic

An AlGaN/GaN HEMT-based monolithic integrated X-band low noise amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Pang Lei ; Inst. of Microelectron., Beijing, China ; Chen Xiaojuan ; Liu Xinyu

Noise performance of AlGaN/GaN HEMT has received more and more worldwide attention in recent years. In this paper, a MMIC process in AlGaN/GaN technology has been developed. A LNA design is based on a AlGaN/GaN HEMT noise model and a complete model library of passive elements under the optimum bias for LNA design. The paper describes modeling, bias dependence of small-signal and noise parameters, circuit design of the LNA using noise model without transistor noise measurement, and demonstrates a NF of 2 dB at 8GHz.

Published in:

Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2012 International Workshop on

Date of Conference:

19-20 April 2012