By Topic

Wafer-scale oxide fusion bonding and wafer thinning development for 3D systems integration: Oxide fusion wafer bonding and wafer thinning development for TSV-last integration

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

18 Author(s)
S. Skordas ; Semicond. R&D Center, IBM Corp., Albany, NY, USA ; D. C. La Tulipe ; K. Winstel ; T. A. Vo
more authors

300mm Si wafer-scale oxide fusion bonding and mechanical/wet etch assisted wafer thinning processes were combined with a TSV-last 3D integration strategy to fabricate electrical open/short yield learning on through-wafer electrical TSV test chains.

Published in:

Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on

Date of Conference:

22-23 May 2012