Referenced Items are not available for this document.
The bonding behavior of a low temperature direct wafer bonding process was studied for Si wafers with native oxide and Si wafers with thermal oxide. It was found that high bond strength could be achieved without annealing already at RT. Silicon bulk strength could be reached with annealing at 200°C.
Published in:
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Date of Conference: 22-23 May 2012
- Page(s):
- 145
- Print ISBN:
- 978-1-4673-0743-7
- INSPEC Accession Number:
- 12863922
- Conference Location :
- Tokyo
- Digital Object Identifier :
- 10.1109/LTB-3D.2012.6238072
- Product Type:
- Conference Publications
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