Cart (Loading....) | Create Account
Close category search window

Low temperature Cu/Cu direct bonding using formic gas in-situ treatment

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Wenhua Yang ; Sch. of Eng., Univ. of Tokyo, Tokyo, Japan ; Akaike, M. ; Suga, T.

A low temperature Cu/Cu direct bonding technology using formic acid vapor treatment was developed. Using this technology, 6mm×6mm Cu film chips were bonded at low temperature in N2 atmosphere. XPS surface analysis shows that Cu surface oxide was reduced after formic gas in-situ treatment. The bonding was conducted in N2 at 200°C after Cu surface was treated at 200°C for 10min.

Published in:

Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on

Date of Conference:

22-23 May 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.