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Low temperature Cu/Cu direct bonding using formic gas in-situ treatment

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3 Author(s)
Wenhua Yang ; Sch. of Eng., Univ. of Tokyo, Tokyo, Japan ; Akaike, M. ; Suga, T.

A low temperature Cu/Cu direct bonding technology using formic acid vapor treatment was developed. Using this technology, 6mm×6mm Cu film chips were bonded at low temperature in N2 atmosphere. XPS surface analysis shows that Cu surface oxide was reduced after formic gas in-situ treatment. The bonding was conducted in N2 at 200°C after Cu surface was treated at 200°C for 10min.

Published in:

Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on

Date of Conference:

22-23 May 2012

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