Scintillators Based on ${\hbox{CdWO}}_{4}$ and ${\hbox{CdWO}}_{4}\!\!:\!\!{\hbox{Bi}}$ Single Crystalline Films

This research is directed on creating by liquid phase epitaxy the single crystalline film scintillators based on undoped and Bi doped CdWO
₄
compounds as well as the phoswich detector based on “CdWO
₄
:Bi or CdWO
₄
films/CdWO
₄
or CdWO
₄
:Bi crystals” epitaxial structures. The luminescent and scintillation properties of the undoped and Bi
³⁺
doped (in a concentration range of 0.04-0.25 at. %) CdWO
₄
films, grown by LPE method from Na
₂
WO
₄
flux, were compared with the properties of CdWO
₄
bulk crystal analogs, grown from melts by the Czochralski method. Using the traditional luminescence spectroscopy and the luminescence spectroscopy under excitation by pulsed synchrotron radiation with energy in the fundamental absorption range of CdWO
₄
host, we have also examined the nature of different emission centers and studied energy transfer processes from tungstate hosts to Bi
³⁺
ions and defect centers in CdWO
₄
and CdWO
₄
:Bi films and their crystal analogs.