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Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs

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6 Author(s)
Kuboyama, S. ; Japan Aerospace Exploration Agency, Tsukuba, Ibaraki, Japan ; Ikeda, N. ; Mizuta, E. ; Abe, H.
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The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains a critical issue for devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was also proposed.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:59 ,  Issue: 4 )

Date of Publication:

Aug. 2012

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