Cart (Loading....) | Create Account
Close category search window
 

Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kuboyama, S. ; Japan Aerospace Exploration Agency, Tsukuba, Ibaraki, Japan ; Ikeda, N. ; Mizuta, E. ; Abe, H.
more authors

The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains a critical issue for devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was also proposed.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:59 ,  Issue: 4 )

Date of Publication:

Aug. 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.