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A 135 GHz Differential Active Star Mixer in SiGe BiCMOS Technology

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2 Author(s)
Dong-Hyun Kim ; Sch. of Electr. Eng., Korea Univ., Seoul, South Korea ; Jae-Sung Rieh

A 135 GHz Gm-boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18- μm SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P-1 dB of -20 dBm and LO-RF isolation of 31 dB. The entire circuit draws 1.3 mA from a 3 V supply. The fabricated mixer occupies 0.23 × 0.54 mm2 of chip area excluding pad region.dual baluns

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:22 ,  Issue: 8 )