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MOSFET Drain Current Noise Modeling With Effective Gate Overdrive and Junction Noise

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7 Author(s)
Chan, L.H.K. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Yeo, K.S. ; Chew, K.W.J. ; Ong, S.N.
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In this letter, a drain current noise model that includes the channel thermal noise and the shot noise generated at the source-bulk junction and the drain-bulk junction is presented. A unified analytical expression is derived to ensure excellent continuity with smooth transition of drain current noise from weak- to strong-inversion regimes, including the moderate-inversion region. Excellent agreement between simulated and extracted noise data has shown that the proposed model is accurate over different dimensions and operating conditions.

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Electron Device Letters, IEEE  (Volume:33 ,  Issue: 8 )