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This paper presents the manufacturing technology using basic semiconductor technological steps of a novel semitransparent solar cell that can be used for building integrated applications. Arbitrary pattern of holes can be etched using 5 wt.% tetramethylammonium hydroxide solution. Ammonium persulfate powder has to be dissolved in the etchant in order to maintain a stable 1.34 μm/min etching rate over the 3.5 hour etching process. The ARC layer is the 90 nm thick silicon dioxide remaining after the anisotropic etching. The efficiency of the semitransparent solar cell is 6.12% including grid contact and through-hole areas and the reached transparency is 6.7%.