By Topic

Compact X-band sige power amplifier for single-chip phased array radar applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Zihir, S. ; Fac. of Eng. & Natural Sci., Sabanci Univ., Istanbul, Turkey ; Dinc, T. ; Gurbuz, Y.

An X-band power amplifier (PA) is presented for single-chip phased array radar applications. In this work, the choice of optimum circuit topology for X-band PA design is discussed and possible stability issues for high and low frequencies are analysed. The PA features a two-stage cascode architecture that includes both high-speed (low breakdown) and high breakdown (low-speed) SiGe transistors. It consists of two stages providing a 23.2 dBm saturated output power with a 28 power-added efficiency at 9 GHz. The output 1-dB compression point (P1dB) is higher than 20 dBm in a 3 GHz bandwidth and has a maximum value of 22.2 dBm. The small-signal gain is 25.5 dB with a 3-dB bandwidth of 3.2 GHz (7.3 10.5 GHz). The PA has been fabricated using 0.25 m SiGe BiCMOS process provided by IHP Microelectronics. The PA occupies 1 mm 0.6 mm chip area and consumes 120 mA from a 4 V supply voltage. These results demonstrate comparable or better performance than other reported PAs and suitable performance for single-chip phased array applications.

Published in:

Microwaves, Antennas & Propagation, IET  (Volume:6 ,  Issue: 8 )