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An X-band power amplifier (PA) is presented for single-chip phased array radar applications. In this work, the choice of optimum circuit topology for X-band PA design is discussed and possible stability issues for high and low frequencies are analysed. The PA features a two-stage cascode architecture that includes both high-speed (low breakdown) and high breakdown (low-speed) SiGe transistors. It consists of two stages providing a 23.2 dBm saturated output power with a 28 power-added efficiency at 9 GHz. The output 1-dB compression point (P1dB) is higher than 20 dBm in a 3 GHz bandwidth and has a maximum value of 22.2 dBm. The small-signal gain is 25.5 dB with a 3-dB bandwidth of 3.2 GHz (7.3 10.5 GHz). The PA has been fabricated using 0.25 m SiGe BiCMOS process provided by IHP Microelectronics. The PA occupies 1 mm 0.6 mm chip area and consumes 120 mA from a 4 V supply voltage. These results demonstrate comparable or better performance than other reported PAs and suitable performance for single-chip phased array applications.