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Current-induced motion of a transverse magnetic domain wall in the presence of spin Hall effect

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5 Author(s)
Seo, Soo-Man ; Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea ; Kim, Kyoung-Whan ; Ryu, Jisu ; Lee, Hyun-Woo
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We theoretically study current-induced dynamics of a transverse magnetic domain wall in bi-layer nanowires consisting of a ferromagnetic layer on top of a nonmagnetic layer with strong spin-orbit coupling. Domain wall dynamics is characterized by two threshold current densities, JthWB and JthREV, where JthWB is a threshold for the chirality switching of the domain wall and JthREV is another threshold for the reversed domain wall motion caused by spin Hall effect. Domain walls with a certain chirality may move opposite to the electron-flow direction with high speed in the current range JthREV<J<JthWB for the system designed to satisfy the conditions JthWB>JthREV and α>β, where α is the Gilbert damping constant and β is the nonadiabaticity of spin torque. Micromagnetic simulations confirm the validity of analytical results.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 2 )