By Topic

Vacancy-type defects in InxGa1–xN alloys probed using a monoenergetic positron beam

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
9 Author(s)
Uedono, A. ; Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan ; Ishibashi, S. ; Watanabe, T. ; Wang, X.Q.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Native defects in InxGa1–xN grown by plasma-assisted molecular beam epitaxy were probed by a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured, and these were compared with results obtained using first-principles calculation. The defect concentration increased with increasing In composition x and reached the maximum at x = 0.44∼0.56. A clear correlation between the line-width of photoluminescence and the defect concentration was obtained. The major defect species detected by positron annihilation was identified as cation vacancies coupled with multiple nitrogen vacancies (VNs), and their introduction mechanism is discussed in terms of the strain energy due to bond-length/angle distortions and the suppression of the VN formation energy by neighboring In atoms.

Published in:

Journal of Applied Physics  (Volume:112 ,  Issue: 1 )