Cart (Loading....) | Create Account
Close category search window
 

Application of inline high resolution x-ray diffraction in monitoring Si/SiGe and conventional Si in SOI fin-shaped field effect transistor processes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Hung, Pui Yee ; SEMATECH, 257 Fuller Road, Albany, New York 12203 ; Kasper, Nikolai ; Nadeau, Jim ; Ok, Injo
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.4732783 

This study investigates the application of inline high resolution x-ray diffraction (HRXRD) for process control of Si/SiGe and conventional Si on silicon-on-insulator (SOI) fin-shaped field effect transistors (FinFETs). HRXRD measurements were taken from test pads on production wafers; the process stages under study were pre- and post-fin etch. For the pre-etch stage, HRXRD monitors the Si or Si/Ge thickness, Ge concentration (%), and crystal quality. For thickness, HRXRD results matched the fin height from a corresponding device within 2 Å. When equipped with a 1D detector, the typical measurement time can be as short as 20 min. In the post-etch stage, HRXRD monitors fin pitch with a precision of 3 nm. The choice of diffraction plane has an impact on the signal-to-noise ratio. In particular, the asymmetric 113 reciprocal space map (RSM) has better signal-to-noise than 004 for monitoring Si fins; however, pitch data obtained from these two diffraction planes matches within the measurement precision. The etch process can induce relaxation along the fin height in the Si/SiGe hetero-epitaxial fin and has a deleterious impact on the device’s drive current. Although the RSM is sensitive to such relaxation, a nanobeam diffraction measurement is still needed for quantitative strain measurements. The results show inline HRXRD is a valuable tool for monitoring pre- and post-etch processes during FinFET production. It can track vital fin parameters, including fin height, pitch, and crystal quality, which determine the final device drive current. The measurement is nondestructive and can be taken directly from testing pads in production wafers; it therefore saves testing cost and time and alleviates reliance on destructive techniques like transmission electron microscopy.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:30 ,  Issue: 4 )

Date of Publication:

Jul 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.