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Browse Journals & Magazines > Photonics Technology Letters, ...> Volume:9 Issue:10 Help

High-power operation of InGaAsP-InP laser diode array at 1.73 /spl mu/m

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6 Author(s)
Skidmore, J.A. ; California Univ., Livermore, CA, USA ; Freitas, B.L. ; Reinhardt, C.E. ; Utterback, E.J.
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InGaAsP-InP laser bars with an emission wavelength of 1.73 /spl mu/m have been fabricated using compressively strained multiple-quantum-well (MQW) separate-confinement heterostructures (SCH). One-cm-wide, 0.7-fill-factor, diode bars are bonded onto Si microchannel heatsinks and stacked into a two-dimensional (2-D) laser array, 16 W of continuous-wave (CW) power was produced from a 1-cm bar and 200 W of peak power was generated from a 10-bar array with an emitting aperture of 1 cm/sup 2/.

Published in:
Photonics Technology Letters, IEEE  (Volume:9 ,  Issue: 10 )

Date of Publication: Oct. 1997

Page(s):
1334 - 1336
ISSN :
1041-1135
INSPEC Accession Number:
5707185
Digital Object Identifier :
10.1109/68.623254
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Oct. 1997
Sponsored by :
IEEE Photonics Society

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