High-power operation of InGaAsP-InP laser diode array at 1.73 μm

InGaAsP-InP laser bars with an emission wavelength of 1.73 μm have been fabricated using compressively strained multiple-quantum-well (MQW) separate-confinement heterostructures (SCH). One-cm-wide, 0.7-fill-factor, diode bars are bonded onto Si microchannel heatsinks and stacked into a two-dimensional (2-D) laser array, 16 W of continuous-wave (CW) power was produced from a 1-cm bar and 200 W of peak power was generated from a 10-bar array with an emitting aperture of 1 cm
²
.