Referenced Items are not available for this document.
Vertical leakage/breakdown mechanisms in AlGaN/GaN high-electron-mobility transistors grown on low-resistivity p-type (111) Si substrate are studied by temperature-dependent current-voltage ( I-V) measurements. It is found that the top-to-substrate vertical breakdown voltage (BV) is dominated by the space-charge-limited current conduction involving both acceptor and donor traps in the GaN buffer/transition layer. From the temperature-dependent transient backgating measurements, the acceptor level at EV + 543 meV and the donor level at EC-616 meV were identified.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
8
)
Date of Publication: Aug. 2012
- Page(s):
- 1132 - 1134
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12879334
- Digital Object Identifier :
- 10.1109/LED.2012.2200874
- Product Type:
- Journals & Magazines
- Date of Publication :
- 05 July 2012
- Date of Current Version :
- 20 July 2012
- Issue Date :
- Aug. 2012
- Sponsored by :
- IEEE Electron Devices Society
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