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An integrated poly-SiGe-based piezoresistive pressure sensor, which is directly fabricated above 0.13 m Cu-back-end CMOS technology, is presented. This represents not only the first integrated poly-SiGe pressure sensor directly fabricated above its readout circuit but also the first time that a poly-SiGe MEMS device is processed on top of Cu-back-end CMOS. Despite the low processing temperature (455°C) to allow for above-CMOS integration, the poly-SiGe piezoresistive sensor alone (250 250 m2 membrane) showed a sensitivity of around 2.5 mV/V/bar. The same sensor exhibited a sensitivity of 159.5 mV/V/bar after on-chip amplification. The CMOS circuit showed no significant deterioration after the MEMS processing, although a resistance increase for the Cu-filled metal-to-metal and the tungsten-filled CMOS-MEMS vias was observed.