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Reliability Improvement of 28-nm High- k /Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing

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11 Author(s)
Yi-Lin Yang ; Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung, Taiwan ; Wenqi Zhang ; Chi-Yun Cheng ; Yi-Ping Huang
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In this letter, performance and reliability of high-k/metal gate MOSFETs can be effectively improved using post metallization annealing. Both oxygen and nitrogen were shown to diffuse into a high-k/SiO2 interfacial layer to suppress the formation of oxygen vacancy, thus reducing the gate leakage current without increasing effective oxide thickness. In particular, with appropriate oxygen annealing, gate-induced drain leakage, drain-current degradation, and gate leakage current variation of high- k/metal gate-last MOSFETs can be efficiently suppressed.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 8 )