By Topic

New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Sung-Min Joe ; Sch. of Electr. Eng. & Comput. Sci, Seoul Nat. Univ., Seoul, South Korea ; Min-Kyu Jeong ; Myounggon Kang ; Kyoung-Rok Han
more authors

New schemes of read operation using boosted channel potential of adjacent bit-line (BL) strings are proposed for improving on-state current of a cell string in nand Flash memory. The channel resistance of pass cells in a cell string under read operation is decreased by the electric field due to the boosted channel potential of adjacent BL strings, which increases on-state current of the cell string. Proposed schemes give much smaller read disturbance compared with conventional ones because the boosted channel potential of unselected BL strings prevents soft programming in cells of the unselected BL strings. It was also shown that new read operation of #2 scheme leads to suppress the background pattern dependence by ~58%, as compared with the conventional read operation scheme.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 8 )